2014年

Synthesis of Alternating Copolysiloxane with Terthiophene and Perylenediimide Derivative Pendants for Involatile WORM Memory Device

发文时间:2018-10-26

Synthesis of Alternating Copolysiloxane with Terthiophene and Perylenediimide Derivative Pendants for Involatile WORM Memory Device

Guanyin Wen, Zhongjie Ren, Dianming Sun, Tingjie Zhang, Lili Liu, Shouke Yan

Abstract : Alternating copolysiloxane with both electron donor terthiophene and electron acceptor perylenediimide derivative pendants (PTSialtPDISi) is synthesized successfully. The polymer exhibits high decomposition and glass transition temperatures, good filmforming ability, and high morphological stability. The estimated HOMO and LUMO energy levels of PTSialtPDISi are 5.77 and 3.90 eV, respectively. The fabricated memory device with the configuration of ITO/PTSialtPDISi/Au(Al) shows nonvolatile writeoncereadmanytimes (WORM) memory characteristics. Its turnon threshold voltage is 1.7 V, while its ON/OFF current density ratio is around 104 in ambient atmosphere. The welldefined memory property of PTSialtPDISi is attributed to the transition of the pendant terthiophene and perylenediimide groups from the disoriented state to the ordered facetoface conformation at the threshold voltage and the charge transfer interaction between pendent terthiophene donor and perylenediimide acceptor moieties, which are confirmed by XRD patterns and fluorescence emission measurement. This suggests that the new donor–acceptor polysiloxanes have potential applications in the field of memory devices.