Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors
Lili Liu, Zhongjie Ren, Chengyi Xiao, Bing He, Huanli Dong, Shouke Yan, Wenping Hu and Zhaohui Wang
Abstract : Large-area highly-ordered F-NDI films were obtained by epitaxial-crystallization on highly-oriented PE substrates through vacuum deposition. An electron mobility of 0.2 cm2 V−1 s−1 was achieved based on such epitaxially-crystallized F-NDI films, which is 4 times higher than that of its un-oriented thin film devices.
